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| LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * IS-95 CDMA PERFORMANCES POUT = 20 W EFF. = 28 % * EDGE PERFORMANCES POUT = 35 W EFF. = 35 % * GSM PERFORMANCES POUT = 75 W EFF. = 55 % * EXCELLENT THERMAL STABILITY * BeO FREE PACKAGE * INTERNAL INPUT MATCHING * ESD PROTECTION PIN CONNECTION 1 M265 epoxy sealed ORDER CODE LET9085 BRANDING LET9085 DESCRIPTION The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity. ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 2 3 1. Drain 2. Source 3. Gate Unit V V A W C C -0.5 to +15 12 186 200 -65 to +150 THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 0.7 C/W January, 28 2003 1/4 LET9085 ELECTRICAL SPECIFICATION (TCASE = 25 C) STATIC (Per Section) Symbol V(BR)DSS IDSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS CRSS VGS = 0 V VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 10 A VDS = 26 V VDS = 65 V VDS = 0 V ID = TBD ID = 2 A ID = 6 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 2.9 TBD 0.19 8 TBD 75 0.4 Test Conditions Min. 65 1 10 1 Typ. Max. Unit V A A A V V mho pF pF pF * Includes Internal Input Moscap. DYNAMIC (f = 865 - 895 MHz) Symbol P1dB D GP IMD3 Load mismatch POUT (CDMA)(1) D (CDMA)(1) (1) IS-95 CDMA Test Conditions VDD = 26 V VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD IDQ = TBD POUT = 90 W POUT = 90 W PEP POUT = 90 W PEP POUT = 90 W Min. 90 50 17 Typ. 105 55 Max. Unit W % dB -31 -28 10:1 dBc VSWR W % VDD = 26 V IDQ = TBD ALL PHASE ANGLES 750 KHz ACPR: -45dBc 1.98 MHz ACPR: -60dBc 750 KHz ACPR: -45dBc 1.98 MHz ACPR: -60dBc 20 28 Pilot, Sync, Paging, Traffic, Codes 8 Thru 13 DYNAMIC (f = 920 - 960 MHz) P1dB GP D Load mismatch POUT(EDGE) D(EDGE) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD POUT = 70 W POUT = 70 W POUT = 85 W 35 35 70 15 50 75 16 55 10:1 W dB % VSWR W % VDD = 26 V IDQ = TBD ALL PHASE ANGLES 400 KHz < -60 dBc 600 KHz < -70 dBc 400 KHz < -60 dBc 600 KHz < -70 dBc EVM < 3 % EVM < 3 % ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model 2/4 Class 2 M3 LET9085 M265 (.370 x .780 WIDE 2/L N/HERM W/FLG) MECHANICAL DATA mm Inch MAX 12.83 5.33 9.91 20.02 34.16 0.15 1.14 1.70 4.32 9.53 28.19 3.51 MIN. .495 .170 .380 .772 1.335 .003 .035 .057 .125 .365 1.090 .118 TYP. MAX .505 .210 .390 .788 1.345 .006 .045 .067 .170 .375 1.110 .138 DIM. A B C D E F G H I J K L MIN. 12.57 4.32 9.65 19.61 33.91 0.08 0.89 1.45 3.18 9.27 27.69 3.00 TYP. Ref. 1023153 3/4 LET9085 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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